Abstract
InAs-CrAs systems are synthesized by the vertical Bridgman–Stockbarger method. XRD analysis and microstructural study of InAs-CrAs composites show that CrAs metallic inclusions are uniformly distributed in the InAs matrices. By investigating of microstructure of InAs-CrAs eutectic composite by electron microscope, it has been established that the interfacial zone between the semiconductor matrix and metallic inclusions is generated. In computations of effective electrical and thermal conductivity of the composite were taken into account the role of these interfacial zones.
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