Abstract
We report the direct measurement, by x-ray photoemission spectroscopy, of the valence-band discontinuity, ΔEv, for two types of abrupt GaAs–AlAs (110) heterojunctions grown by molecular beam epitaxy: (i) those formed by growth of GaAs on AlAs, and (ii) those grown in the reverse sequence, AlAs on GaAs. The ΔEv at GaAs–AlAs interfaces is, on average, 0.25 eV larger than at AlAs–GaAs interfaces. The ΔEv for GaAs–AlAs heterojunctions was found to average 0.4 eV; the corresponding ΔEv for AlAs–GaAs heterojunctions averaged 0.15 eV. The 0.25 eV difference in average ΔEv value that we observe for the two types of interface demonstrates that the energy-band discontinuities depend on growth sequence in the GaAs–AlAs heterojunction system.
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