Abstract
The composition and the chemical element states of the native oxide of GaAs(100) during ECR-hydrogen cleaning have been investigated. It was found that carbon-containing impurities and arsenic oxide are removed from the surface at a substrate temperature equal to 150°C, while gallium oxide is removed at 350°C. The reduction of arsenic oxide at low substrate temperatures is accompanied by the formation of gallium oxide which diminishes the etching rate.
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