Abstract
It is shown that the native oxide of GaAs can be thermally grown easily at a temperature of 250°C using a high-pressure oxidation technique. The resulting oxide films are uniform, chemically stable and have a breakdown strength of 68 × 106V/cm and a bandgap energy greater than 6·5eV. The chemical composition of the oxide films is studied using X-ray photoelectron spectroscopy, and it is found to contain oxides of both gallium and arsenic.
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