Abstract
ABSTRACT It is shown that the concentration of impurity in a silicon crystal grown in a vacuum is governed by the rate of evaporation and the growth conditions. Three cases of practical interest are distinguished : (i) When evaporation of volatile impurities from the melt is substantially complete before growth of the crystal is begun, boron and aluminium are the only residual impurities from groups 3 and 5. (ii) An added impurity, such as phosphorus, is distributed uniformly in a crystal when the growth time, from the moment of addition, has a critical value.. (iii) Repeated addition of an impurity, such as antimony, to a melt containing an impurity of opposite type, produces a series of identical p-n junctions in the growing crystal, the type of junction produced being controlled by the growth conditions employed. Equations describing the combined effects of evaporation and segregation are derived, and the rates of evaporation of certain impurities calculated.
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