Abstract
Equations are derived for the impurity distribution which arises by evaporation of impurities from the surface of a homogeneously doped semiconductor. The rate of evaporation is assumed to be proportional to the surface concentration. When a rectifying metal contact is made to a semiconductor with such an impurity distribution, the dependence of capacitance on the applied voltage can be used to determine the proportionality constant between rate of evaporation and surface concentration.
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