Abstract
Abstract In a recent series of papers it has been suggested that small-signal, time-of-flight (TOF) current-mode transients in a-Si: H are due to interfacial relaxation, not photoinjected carrier transport. It is therefore alleged that drift mobility estimates based on TOF in a-Si: H are invalid. However, space-charge limited (SCL) xerographic discharge is, clearly, a bulk-transport controlled process and identical transit times are obtained from analysis of SCL xerographic discharge, small-signal xerographic TOF, small-signal current-mode TOF and transient SCL injection when these diverse measurements are performed on the same a-Si: H films. Present results are both mutually corroborative and in accord with previously published TOF data, which find electron drift mobilities to be about 1 cm2 V−1 s−1 at room temperature.
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