Abstract
In a recent series of papers it has been suggested that time of flight (TOF) current transients in a-Si:H are due to interfacial relaxation, not photoinduced carrier transport. By analysis of time resolved space charge limited (SCL) xerographic discharge in a-Si:H it is demonstrated that photogenerated carriers transport through the entire sample bulk with μ ∼ 1 cm 2/Vs for electrons. Identical transit times are obtained from analysis of SCL xerographic discharge, small signal xerographic TOF, small signal current mode TOF and transient SCL injection measurements performed on the same a-Si:H films.
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