Abstract
AbstractResults of white beam X‐ray interference measurements on almost perfect semiconductor wafers are presented. A specific measurement geometry allows for the investigation of diffraction effects on thin wafers down to at least 375 µm with a simple experimental setup (standard lab CT with microfocus X‐ray tube). Furthermore, the dynamic diffraction effect of double refraction has been studied in detail for thicker samples. This might lead to a new wafer testing method as the observed dynamic effects are very sensible on crystal quality.
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