Abstract
Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
https://doi.org/10.1002/crat.202400198
Copy DOIJournal: Crystal Research and Technology | Publication Date: Jan 23, 2025 |
Research of In0.48Ga0.52P/GaAs Heterojunction Interface Properties Improvement Deposited by MOCVD
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.