Abstract
X-ray diffraction topography in transmission and reflection has been employed to analyze crystal faults and stresses in germanium wafers caused by deposition of oxide layers, epitaxy and planar diffusion. Localized diffusion of arsenic, gallium and phosphorus normally does not introduce stresses sufficiently high to generate dislocations in germanium (011) wafers. However, heat treatment of germanium wafers covered with a SiO2 film causes high stresses which are often relieved by plastic deformation.
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