Abstract
The subband structure of two-dimensional X-band electrons in modulation-doped very thin (25–75 Å) AlAs quantum wells was studied in magnetotransport experiments and analyzed in self-consistent calculations. Effective mass estimation based on temperature dependent magnetoresistances clearly showed X z - X xy crossover at an AlAs thickness of about 45 Å, which is much less than the crossover thickness in AlAs/GaAs type II superlattices (60 Å). Considering the results of self-consistent calculations together with some observed anomalies in X xy electron magnetoresistances, we can conclude that this difference is due to the effect of doping and to the degeneracy change in k-space occurring at the crossover thickness of AlAs.
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