Abstract
For interface-roughness scattering and for zero temperatures, we compare theoretical results for the transport properties of the electron gas present in thin AlAs quantum wells with experimental results for a well of width L=45Å. The importance of a density dependent effective mass is discussed. For the mobility, reasonable agreement between theory and experiment is obtained by taking into account multiple scattering effects, which lead to a metal-insulator transition. We predict the single-particle relaxation time. With a density dependent effective mass, the calculated critical electron density of the metal-insulator transition is found to be in good agreement with the experimental value.
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