Abstract
Transport properties of electrons confined in AlAs quantum wells were studied using low temperature magnetoresistance measurement. The structure used is quantum wells consisting of AlAs channel layers sandwiched by Si-doped Al0.45Ga0.55As barrier layers. This structure enables us to confine electrons in the X valleys of AlAs. The electron confinement in the AlAs quantum wells were confirmed by a mobility enhancement at low temperatures. Magnetoresistance measurements showed clear Shubnikov–de Haas oscillations for the magnetic field parallel to the growth direction. A large effective mass of (0.55±0.05) m0, which is close to √mtml (mt:transverse effective mass, ml:longitudinal effective mass), was obtained from the temperature dependence of the oscillations. This indicates that the ground state is Xx, Xy, even though Xz was expected to be the ground state due to its large effective mass parallel to the growth direction. This changeover of AlAs X valley states can most likely be attributed to a strain-induced energy shift caused by the small lattice mismatch between GaAs and AlAs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
