Abstract
Abstract We have used a self-assembling monolayer of dodecanethiole molecules as the resist for a lithography technique based on a beam of metastable helium atoms. Doses as low as 3 metastable helium atoms per 10 resist molecules are enough to write patterns. The writing mechanism is based on the Penning-ionization-induced changes of the local wetting properties of the surface. An edge resolution of 30 nanometers is demonstrated.
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