Abstract
A new temperature sensor utilising an adaptive nonlinearity cancellation circuit is proposed among two base-emitter voltages (VBEPT and VBEIO) of the diode-connected bipolar junction transistors driven in saturation region with a proportional to absolute temperature current and an independent of absolute temperature current, respectively. In this way, the nonlinear effect originated from the temperature dependence of saturation current (IS) drift can be cancelled adaptively through subtraction circuits. The measurements indicate that the proposed temperature sensor can achieve a sensitivity of −9.75 mV/°C with linearity up to 99.95% over the temperature range of 170°C (−40–130°C).
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