Abstract
In this paper, a technology computer-aided design (TCAD) model of a silicon carbide (SiC) insulated-gate bipolar transistor (IGBT) has been calibrated against previously reported experimental data. The calibrated TCAD model has been used to predict the static performance of theoretical SiC IGBTs with ultra-high blocking voltage capabilities in the range of 20-50 kV. The simulation results of transfer characteristics, IC-VGE, forward characteristics, IC-VCE, and blocking voltage characteristics are studied. The threshold voltage is approximately 5 V, and the forward voltage drop is ranging from VF = 4.2-10.0 V at IC = 20 A, using a charge carrier lifetime of τA = 20 μs. Furthermore, the forward voltage drop impact for different process dependent parameters (i.e., carrier lifetimes, mobility/scattering and trap related defects) and junction temperature are investigated in a parametric sensitivity analysis. The wide-range simulation results may be used as an input to facilitate high power converter design and evaluation. In this case, the TCAD simulated static characteristics of SiC IGBTs is compared to silicon (Si) IGBTs in a modular multilevel converter in a general high-power application. The results indicate several benefits and lower conduction energy losses using ultra-high voltage SiC IGBTs compared to Si IGBTs.
Highlights
In high power electronic applications, silicon (Si) based bipolar charge carrier transistors (i.e., insulated-gate bipolar transistors (IGBTs) and Thyristors) have been the main choice of semiconductor switches due to low conduction losses, high blocking voltage capability and robustness
No experimental results or finite-element simulation results for ultra-high voltage (25-50 kV) silicon carbide (SiC) IGBTs are visible in the literature
A 4H-SiC IGBT technology computer-aided design (TCAD) model has been calibrated against experimental data and has been used to widely investigate static performance of high voltage SiC IGBTs (20-50 kV)
Summary
In high power electronic applications, silicon (Si) based bipolar charge carrier transistors (i.e., insulated-gate bipolar transistors (IGBTs) and Thyristors) have been the main choice of semiconductor switches due to low conduction losses, high blocking voltage capability and robustness. For accurate device design and its electrical behavior predictability, a wide-range numerical simulation approach is required since several of the process dependent parameters (i.e., carrier lifetimes, mobility and trap related defects) of the manufacturing process are still uncertain at this point.
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