Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module

Bin-Liang Cheng,Dianhao Zhang,Neng Zhang,Xiao-Guang Huang

doi:10.3221/igf-esis.55.24

Abstract

Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.

Highlights

The application in aerospace, automobile, oil drilling and other fields accelerates the improvement of electronic device of high power, high packaging density and high frequency
The results showed that creep strain occurred at the corner point of the solder layer and that the thinner the solder joint, the creep strain accumulated with temperature cycles
The thermomechanical finite element (FE) model under cyclic temperatures was established based on the creep constitutive model in this paper, and the cyclic stress and accumulated creep strain of Sn-Ag-Cu solder in the Silicon carbide (SiC)-insulated gate bipolar transistor (IGBT) power module was estimated

Summary

Introduction

The application in aerospace, automobile, oil drilling and other fields accelerates the improvement of electronic device of high power, high packaging density and high frequency. SiC-IGBT; Thermal cycle; Thermal fatigue life; Creep; Solder layer.

Results

Conclusion