White noise in MOS transistors and resistors

Abstract

The theoretical and experimental results for white noise in the low-power subthreshold region of operation of an MOS transistor are discussed. It is shown that the measurements are consistent with the theoretical predictions. Measurements of noise in photoreceptors-circuits containing a photodiode and an MOS transistor-that are consistent with theory are reported. The photoreceptor noise measurements illustrate the intimate connection of the equipartition theorem of statistical mechanics with noise calculations. >