Abstract
We have previously demonstrated the feasibility of fitting calculated zone-axis Convergent Beam Electron Diffraction (CBED) patterns to zero-loss energy-filtered experimental data. The aim of this pattern matching procedure is to refine accurate low-order structure factors that can be used to reconstruct the bonding charge density. Initial tests on silicon [110] zone-axis patterns have shown that this new electron diffraction technique is capable of accuracies comparable with existing X-ray methods and that the results are in good agreement with solid state theory calculations. The general applicability of the CBED pattern matching technique is now investigated by studying the bond charge of two other Group IV materials, i.e. germanium and diamond, and the HI-V semiconductor GaAs.The (110) plane of the reconstructed bond charge density for each of the Group IV materials is shown in Figure 1. The agreement between these results and those predicted by solid state theory is excellent despite the use of only five independent Fourier components in the reconstruction.
Published Version
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