Abstract
The photosensitivity of aluminium (Al)/lead sulphide (PbS)/indium tin oxide (ITO) thin layered structure is investigated considering the photon wavelength dependent current-voltage and capacitance-voltage characteristics of the device. The current-voltage characteristics of the test structure are analyzed adopting the back-to-back Schottky barrier diode model. The diode possesses low dark current in contrast to the high value of photocurrents measured under different illumination wavelengths. The change in photocurrents with different illumination wavelengths clearly indicates the change in photo-sensitivity of the device. The capacitance-voltage characteristics of Al/PbS/ITO structure demonstrate a definite improvement of the device capacitance with the higher wavelength exposures. The matter is explained in terms of the additional capacitance owing to the excess carrier generation within the device under illumination. The photosensitivity modulation of the device can be exploited in photo-sensor or photo-detector applications in various electronic devices.
Highlights
The electrical and optoelectronic properties diode current and responsivity
The minor scattering and some other inconsequential peaks observed in the absorbance plot are attributed to the lattice resonance and subband transitions related to the deposited material
The measured forward and reverse current-voltage characteristics of the Al/PbS/ITO diode are shown in fig
Summary
The electrical and optoelectronic properties diode current and responsivity. to of a variety of metal-semiconductor-metal assess the quality of the photodiode, the role (M-S-M) back-to-back diode structures are of photon wavelength dependent photostudied in numerous occasions earlier 2019; Ruzgar and Caglar, 2020; added attention and need to be studied in a Averin et al, 2020). The photon wavelength dependent photosensitivity modulation of a metal-semiconductor-metal configuration is investigated considering the aluminium/lead sulphide/ indium tin oxide structure and the role of exposure wavelength on the currentvoltage and capacitance-voltage characteristics of the device are analyzed. The photon wavelength dependent photosensitivity of the Al/PbS/ITO M-S-M structure is investigated considering back-toback Schottky barrier diode model. The results of such investigations are reasonably interesting and discussed
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