Abstract
In this paper, a new method based on the Artificial Bee Colony (ABC) for determining the Schottky barrier height (Φ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub> ), ideality factor (n) and series resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> ) of a Schottky barrier diode (SBD) model using forward current-voltage (I-V) characteristics, is described. For this SBD model, the Ni/n-GaAs/In Schottky barrier diode was produced in a laboratory and the I-V characteristics of the SBD were measured. The real parameters (Φ <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">b</sub> , n, R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">S</sub> ) and obtained parameters from the ABC of the SBD model were compared to determine the model's accuracy.
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