Waveguides Fabricated in Fused Silica by Germanium Ion Implantation at Varying Doses

Abstract

AbstractThe implantation of MeV Ge3+ ions into fused silica has been used to fabricate single mode channel waveguides with a low propagation loss of 0.10–0.15 dB/cm. The loss coefficient, α, has been measured as a function of ion dose (8 × 1013 to 8 × 1016 ions/cm2) and annealing temperature (250 to 600 °C) at λ = 1300 nm. The value of cc for the as-implanted waveguides exhibited a minimum of -1.0 dB/cm at an intermediate range of dose from 8 × 1014 to 8 × 1015 ions/cm2. A progressive reduction in α occurred as the annealing temperature was increased from 300 to 500 °C. Annealing of the implanted waveguides at 500 °C for 1 h has produced an order of magnitude decrease in α to 0.1 dB/cm at 8 × 1014 ions/cm2. At doses which were outside of the intermediate range, the value of α was ≥ 10 dB/cm. This trend in α with ion dose has been attributed to the dominance of a residual nuclear component of damage after annealing.