Study of the Processes of the Formation of Nanoscale MoO3 Films by Thermal Oxidation and Ion Bombardment

Abstract

Nanoscale MoO3 films are obtained on the surface of a Mo single crystal by means of thermal oxidation and ion implantation. The optimal modes of ion implantation (the partial oxygen pressure, the ion energy and dose, and the annealing temperature) are determined to form homogeneous MoO3/Mo films with thicknesses ranging from 30 to 100 A and with good stoichiometry. It is established that, for low doses of oxygen ions (D ≤ 1016 cm–2), nanoscale MoO3 phases form on the Mo-crystal surface. The dependence of the degree of Mo surface coverage by MoO3 cluster phases on the ion dose is determined. Films with a thickness of ~100 A are obtained by successively implanting $${\text{O}}_{2}^{ + }$$ ions with energies of 5, 3, and 1 keV. The composition, the electronic structure, and the emission and optical properties of the nanoscale phases and MoO3 films are studied using a complex of methods (Auger- and photoelectron spectroscopy, secondary electron emission, and secondary-ion mass spectroscopy).