Low loss channel waveguides fabricated in fused silica by germanium ion implantation

Abstract

The authors report the first low loss channel waveguides (0.10 0.15 dB/cm) formed in fused silica by the implantation of MeV Ge ions. The loss coefficient /spl alpha/ was measured as a function of ion dose (8/spl times/10/sup 13/-8/spl times/10/sup 16/ ion/cm/sup 2/) and annealing temperature (250 to 600/spl deg/C) at 1300 nm. The as-implanted waveguides exhibited a minimum value of /spl alpha/=0.9 dB/cm at an intermediate range of dose with a reduction to 0.10-0.15 dB/cm after annealing at 500/spl deg/C. >