Abstract
The thermal stability of nickel monosilicide (NiSi) is one of the important research topics in the area of nano-complementary metal oxide semiconductor. This paper reports the effect of germanium (Ge) ion implantation on the thermal stability of the structure. High dose Ge ion implantation can improve the thermal stability of the structure. Ge ion implantation before NiSi formation results in a very smooth interface due to Ge atom pileup at the interface. This high concentration Ge layer reduces the interface energy so that the thermal stability can be improved. Both the phase-transformation temperature and agglomeration temperature are improved by . The effects of Ge ion implantation on the NiSi-contacted and shallow junctions are also examined. Although fast Ni diffusion via the ion implantation induced defects is observed, better thermal stability can still be observed on the junction.
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