Abstract
We fabricated a buried single line waveguide within a depth of 100 μm below the Tm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3+</sup> -doped 75GeS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> 15Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> 10CsI (GGSI) glass substrate surface using a single line approach by femtosecond laser direct writing. The near field profile of the guided modes and the propagation loss of the fabricated waveguides were measured and discussed. Single mode guidance at 1039 nm has been demonstrated. The writing parameters for the minimum propagation loss of 0.86 dB/cm are 0.8-μJ pulse energy and 100-μm/s scanning speed. This waveguide will be a good candidate for the waveguide laser and passive optical components in the mid-infrared application field.
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