Water vapor oxidation of SiC layer of tristructural isotropic particles

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AbstractTristructural isotropic (TRISO) fuel particles, developed for use in high‐temperature gas‐cooled nuclear reactors, can be subjected to oxidizing environments in off‐normal accident scenarios. In this study, surrogate TRISO fuel particles were oxidized at 1000–1350°C for 4 h in 20 kPa water vapor atmosphere balanced with ultrahigh‐purity helium gas. The oxide scale morphology and thickness were studied via scanning electron microscopy, focused ion beam, and transmission electron microscopy. The oxide thickness increased as the oxidation temperature was increased. Although the oxide scale at 1000°C was completely amorphous, pockets of crystalline oxide were observed on particles oxidized at 1200 and 1300°C. Kinetic analysis was performed to deduce the oxidation mechanism by determining the apparent activation energy using linear regression analysis. The oxidation mechanism was consistent for temperatures from 1000 to 1200°C with an activation energy of 412.4 ± 8.8 kJ/mol. The activation energy then dropped to approximately 201 ± 7.1 kJ/mol for temperatures 1200–1350°C. Therefore, there is a change in oxidation mechanism at ∼1200°C. This change is attributed to the existence of a network of significant bubbles in the oxide layer at higher temperatures, which serve as rapid diffusion pathways for the transport of oxidants from the surface to the SiC/SiO2 interface, instead of relying on the bulk diffusion through the SiO2 layer at lower temperatures where only small bubbles are present along the SiC/SiO2 interface.