Abstract
This paper presents results of fully packaged RF-MEMS switches including capacitive series, series-shunt, and SP4T switch nodes. The RF-MEMS capacitive switches are packaged using recently developed wafer scale low-loss and broad-band packaging technology developed at MIT Lincoln Laboratory. A packaged series capacitive switch with 0.11 dB insertion loss and better than 19 dB isolation, a series-shunt packaged capacitive switch with 0.3 dB insertion loss and better than 54 dB isolation, and a SP4T switch with less than 0.26 dB insertion loss and better than 25 dB isolation at 20 GHz are reported.
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