Abstract
Abstract Co-integration of III-V and silicon on the same substrate can enable many applications in photonics, RF, imaging, and sensing. Wafer reconstitution (WARE) is an embedded multi-die integration platform that allows for the integration of heterogenous materials on 200/300 mm Si substrates. This paper describes an integration flow for InP dies attached to 200 mm silicon. Electrical measurements on InGaAs diodes fabricated on WARE wafers confirm that the performance is similar to devices on native InP substrates.
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