Abstract
Wafer bonding has been investigated as a key technology to integrate InP lasers on Si for optoelectronic integrated circuits. The bonding process has been optimized to allow the integration of InGaAsP/InP double-heterostructures (DHs) on Si with keeping the crystal qualities good enough to realize the lasers. As a result, room temperature continuous-wave (CW) operation of InP edge-emitting lasers has been achieved. In addition, as one of the building blocks to implement the optimal interconnections between Si LSIs, InP optical devices on Si integrated with the back-surface diffractive lenses have been demonstrated. A novel bonding process which allows an integration on structured wafers, such as Si LSI wafers, has also been proposed. The wafer bonding is thought to be a promising technique to implement optical interconnections between Si LSI chips.
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