Abstract
Wafer bonding technology has been investigated to integrate InP lasers on Si wafers for optoelectronic integrated circuits. Room temperature continuous-wave (CW) operation of edge-emitting lasers and photo-pumped operation of surface-emitting lasers have been achieved. A novel bonding process which allows an integration of the optical devices on structured wafers, such as Si LSI wafers, has also been proposed. The wafer bonding is thought to be a promising technique to implement optical interconnections between Si LSI chips.
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