Wafer Bonding of InP to Si and its Application to Optical Devices

Abstract

Wafer bonding technology has been investigated to integrate InP lasers on Si wafers for optoelectronic integrated circuits. Room temperature continuous-wave (CW) operation of edge-emitting lasers and photo-pumped operation of surface-emitting lasers have been achieved. A novel bonding process which allows an integration of the optical devices on structured wafers, such as Si LSI wafers, has also been proposed. The wafer bonding is thought to be a promising technique to implement optical interconnections between Si LSI chips.