Abstract
Results are presented for an enhanced type-II W-structured superlattice (WSL) photodiode with an 11.3μm cutoff and 34% external quantum efficiency (at 8.6μm) operating at 80K. The new WSL design employs quaternary Al0.4Ga0.49In0.11Sb barrier layers to improve collection efficiency by increasing minority-carrier mobility. By fitting the quantum efficiencies of a series of p-i-n WSL photodiodes with background-doped i-region thicknesses varying from 1to4μm, the authors determine that the minority-carrier electron diffusion length is 3.5μm. The structures were grown on semitransparent n-GaSb substrates that contributed a 35%–55% gain in quantum efficiency from multiple internal reflections.
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