Abstract
Antimony-based Interband Cascade (IC) photodetectors are emerging as viable candidates for highperformance infrared applications, especially at high operating temperatures. In our previous IC detector designs using InAs/GaSb Type-II superlattices, the quantum efficiency was relatively low as the designs were optimized for high signal to noise ratio. Here we report our recent development of low-noise mid-IR IC photodetectors with high external quantum efficiency. By adopting IC detectors with thicker absorber designs, the quantum efficiency of these mid-IR IC detectors has been increased up to 35%. These IC devices continue to have low-dark current and high temperature operations. Some further analysis on the device characteristics is also presented.
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