Abstract
Wide-band-gap devices such as SiC MOSFET and GaN devices have distinct advantages of high speed and lower switching loss. However, they have higher dv/dt and may cause larger EMI noise. In this paper, design of voltage slew rate on SiC MOSFET devices with soft-switching is investigated. The dv/dt of power devices in the three-phase active-clamped zero voltage switching (ZVS) inverter is analyzed. The voltage slew rate of power devices vs. resonant parameters is discussed. Then the design of dv/dt on power devices are proposed. The dv/dt design has been verified through both the simulation and the experiment on the 10 kW/100kHzSiC-based ZVS three phase inverter.
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