Abstract
2D process simulation of an advanced bipolar device, SATURN, is successfully performed. The fabrication process is characterized by high-pressure local oxidation of a poly-Si/Si structure and extensive use of poly-Si films to form a a self-alighned base-emitter. The simulated topography is in good agreement with the experimental cross-section. Electrical characteristics by a device simulator using the output of process simulation are also in good agreement with the experiments, indicating the effectiveness of the simulation.
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