Abstract
Hexagonal zinc indium sulfide coupled g-C3N4 (H-ZnIn2S4/g-C3N4) nanocomposites were synthesized using chemisorption method and its performance towards photoelectrochemical water splitting activity was studied. The H-ZnIn2S4/g-C3N4 (H-ZIS/CN) nanocomposites exhibited ∼ 1.9 times enhanced photoelectrochemical performance as compared to the H-ZnIn2S4. The enhancement in the PEC water splitting activity of H-ZIS/CN nanocomposite is ascribed to the formation of type-II heterojunction which resulted in improved separation of photogenerated charge carriers and faster transfer of charges at the photoelectrode/electrolyte interface. The electrochemical impedance study and Mott-Schottky supported these results. Moreover, during photoelectrochemical reactions, H-ZIS/CN nanocomposites showed tremendous stability under visible light. A potential mechanism of the enhanced photoelectrochemical activity of H-ZIS/CN nanocomposites was proposed and endorsed by the PEC results. This study demonstrates that establishing a heterostructure system by coupling a ternary chalcogenide semiconductor with a conducting polymer is an effective strategy for PEC water splitting applications.
Published Version
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