Abstract
Transparent and electromagnetic (EM) shielding Co-doped SnO2 (CTO) thin films were fabricated using ultrasonic-assisted spray pyrolysis deposition. Structural and chemical investigations showed that the Co2+ ions were substitutionally incorporated into the Sn4+ lattice sites of the SnO2 crystal and that the Co concentration increased with increasing the Co source content. The incorporated Co ions acted as a magnetic dopant and as an electrical acceptor to compensate for the free charge carriers in SnO2. Co-doping could modulate the two conflicting efficiencies of the EM shielding performance in the frequency range of 1.5–18 GHz and the infrared transmittance of the SnO2 thin films.
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