Abstract
By newly introducing InGaP tensile strained layers as barriers of InAsP compressively strained multiple quantum wells and a thin InP intermediate layer between InGaP and InAsP, high crystalline quality InAsP/InP/InGaP strain-compensated multiple quantum wells were successfully grown by metal organic chemical vapour deposition on a (100) InP substrate. A very low threshold current density of 300 A/cm2 was obtained for triple InAsP/InP/InGaP quantum well lasers emitting at 1.3 µm with a GaInAsP seperate-confinement layer.
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