Abstract

We demonstrate a very low-power CMOS LNA for ultra-wideband (UWB) applications using current-reused structure. The LNA is fabricated in a 0.18 μm 1P6M standard CMOS process. The IC prototype achieves a power gain of 9–11.5 dB, a noise figure (NF) of 5–5.6 dB, and the input/output return loss is higher than 8.6/8 dB, while only 9.4 mW power consuming from 3.1 to 10.6 GHz.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.