Abstract
With very high hydrogen diluted silane and germane plasma (R: [H2]/([SiH4]+[GeH4])=100–500 sccm), undoped high-quality alloys (µc-SiGe:H) were prepared in plasma enhanced chemical vapor deposition (PECVD) system with various hydrogen dilutions and substrate temperatures. The microstructures of samples were characterized by X-ray diffraction and micro-Raman scattering spectroscopy. Traveling wave (TW) method was used to investigate the transport properties of these thin films. We found that crystallinity and grain size exerted a big influence on the transport mechanism. Especially with very high hydrogen dilution (R \\succ300), both of conductivity and mobility came to decrease and the electronic transport properties degraded, which were different from that of normal µc-SiGe:H films. These novel phenomena were discussed by strong scattering of the potential barriers between the crystallites.
Published Version
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