Abstract
The effects of a vertical electric field on the fine structure splitting of neutral exciton of monolayer fluctuation GaAs quantum dots were investigated. Using the gate voltage between the top gate electrode and the bottom n-GaAs substrate, the fine structure splitting of the neutral exciton was tuned to 15–30 μeV. Photon correlation measurements demonstrate neutral exciton single photon emission and neutral exciton—biexciton cascaded emission.
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