Abstract
Recently, fluorocarbon (FC) film deposition on a SiO2 surface has become one of the most important processes in semiconductor manufacturing because the formation of a passivation layer on SiO2 during the deposition process plays a crucial role in atomic layer etching and high aspect ratio contact (HARC) etching, areas that are attracting intense interest in the semiconductor industry. In this work, various trends of sample thickness change, namely, decreasing, increasing, and anomalously increasing trends with time, were observed during FC film deposition on a SiO2 surface. The total thickness including both SiO2 and FC film was found to change during the deposition process in various ways depending on the plasma conditions. This can be successfully explained by considering the mechanism of SiO2 etching with FC plasma, taking into account the dependence of the SiO2 etch rate on FC film thickness. This result is expected to be utilized in semiconductor processes such as HARC etching where a precise control of film thickness is needed.
Highlights
INTRODUCTIONFluorocarbon (FC) film deposition has been playing a crucial role in the etching of dielectric materials such as SiO2 and Si3N4 (SiN) since it provides FC radical species that benefit dielectric etching in terms of selectivity and anisotropy by forming FC films on the dielectric surfaces.[1]
Fluorocarbon (FC) film deposition on a SiO2 surface has become one of the most important processes in semiconductor manufacturing because the formation of a passivation layer on SiO2 during the deposition process plays a crucial role in atomic layer etching and high aspect ratio contact (HARC) etching, areas that are attracting intense interest in the semiconductor industry
Fluorocarbon (FC) film deposition has been playing a crucial role in the etching of dielectric materials such as SiO2 and Si3N4 (SiN) since it provides FC radical species that benefit dielectric etching in terms of selectivity and anisotropy by forming FC films on the dielectric surfaces.[1]
Summary
Fluorocarbon (FC) film deposition has been playing a crucial role in the etching of dielectric materials such as SiO2 and Si3N4 (SiN) since it provides FC radical species that benefit dielectric etching in terms of selectivity and anisotropy by forming FC films on the dielectric surfaces.[1]. Avs.scitation.org/journal/jva implies that the total thickness can increase, decrease, or change in a blend of the previous manners over time depending on the plasma conditions. We explain this result by establishing a simple analytical model that considers the FC plasma SiO2 etching mechanism with the dependence of the SiO2 etch rate on FC film thickness.[6,7,8] A description of the experimental setup and results is followed by our analysis based on the developed model, of which validation is supported by the plasma diagnostics we performed
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