Abstract
Relative gas-phase CF 2 densities and CF 2 surface reactivity were characterized during hot filament chemical vapor deposition (HF-CVD) of fluorocarbon (FC) films using our LIF-based imaging of radicals interacting with surfaces technique. CF 2 density shows a clear dependence on the hexafluoropropylene oxide (HFPO) pressure and filament temperature. CF 2 exhibits a low surface reactivity during deposition of CF 2-rich FC films. Results are compared to measurements made during plasma-enhanced CVD (PECVD) of FC films. Mass spectrometry measurements reveal energetic ions with mean energies of 29–92 eV are produced in the PECVD source; these energetic ions account for the observed differences in scattering.
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