Abstract
We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.
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