Abstract
In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al2O3 nanolaminate structure was investigated. The effects of the ultrathin Al2O3 layer and the thickness of Nd:IZO layer in the nanolaminate structure on the improvement of electrical performance and stability of thin film transistors (TFTs) were systematically studied. Besides the carrier movement confined along the near-channel region, driven by the Al2O3 layer under an electrical field, the high performance of the TFT is also attributed to the high quality of the 8-nm-thick Nd:IZO layer and the corresponding optimal Nd:IZO/Al2O3 interface, which reduce the scattering effect and charge trapping with strong M–O bonds in bulk and the back-channel surface of Nd:IZO, according to the X-ray reflectivity (XRR), X-ray photoelectron spectroscopy (XPS), and micro-wave photo conductivity decay (μ-PCD) results. As a result, the Nd:IZO/Al2O3 TFT exhibits an outstanding performance, with a high μsat of 32.7 cm2·V−1·s−1, an Ion/Ioff of 1.9 × 108, and a low subthreshold swing (SS) value of 0.33 V·dec−1, which shows great potential for the room temperature fabrication of TFTs in high-resolution or high-frame-rate displays by a scalable, simple, and feasible approach.
Highlights
Great interest in metal oxide semiconductors (MOS) for thin film transistors (TFTs) has grown dramatically in recent years, due to their visible-light transparency, good uniformity, compatibility with different substrates, fewer limitations on processing temperature, and the high mobility to drive flexibleActive Matrix Organic Light Emitting Diode (AMOLEDs) or high-resolution displays [1,2]
As the most widely-studied MOS material in TFTs, indium gallium zinc oxide (IGZO), the saturation mobility of which is usually 10~20 cm2 ·V−1 ·s−1 [3,4], is limited by its natural structure, especially when the processing temperature is strictly controlled for some device applications on flexible plastic substrates
As reported by our previous works [5,6], we have successfully promoted the mobility of a-IGZO TFTs to 25 cm2 ·V−1 ·s−1 under room temperature conditions by using an a-IGZO/Al2 O3 nanolaminate structure
Summary
Great interest in metal oxide semiconductors (MOS) for thin film transistors (TFTs) has grown dramatically in recent years, due to their visible-light transparency, good uniformity, compatibility with different substrates, fewer limitations on processing temperature, and the high mobility to drive flexible. As the most widely-studied MOS material in TFTs, indium gallium zinc oxide (IGZO), the saturation mobility of which is usually 10~20 cm2 ·V−1 ·s−1 [3,4], is limited by its natural structure, especially when the processing temperature is strictly controlled for some device applications on flexible plastic substrates. > 30 cm2 ·V−1 ·s−1 ) with an Nd:IZO semiconductor processed by a room temperature approach, and investigate the effects of a sputtered Nd:IZO/Al2 O3 nanolaminate structure. The thickness of the Nd:IZO layer in Nd:IZO/Al2 O3 structure showed a great impact on the device performance, due to the nature of film growth during the sputtering process
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