Variation of the exponent of flicker noise in MOSFETs

Abstract

We scrutinize the variation of the exponent of flicker noise in MOSFETs under thoroughly stabilized conditions. We find that the exponent of 1/ f − γ noise varies nonsystematically with the electric properties of the transistors. Stochastic fluctuations of the exponent for a single MOSFET correlate with the noise intensity, as in the Dutta–Horn relationship, but in contrast our correlation applies for a single temperature. We show that this can be expected to be the case for a stabilized, non-drifting MOSFET. With the above correlation we can define an idealized Hooge law for pure 1/ f noise, which is useful for modeling. In our view the variation of the exponent is inherent to the mechanism of flicker noise itself.