Abstract
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments. Our results show that by applying a forward substrate bias to a MOSFET periodically switched between the nominal bias point and the OFF-state, the flicker noise is significantly suppressed. In particular, forward back bias is effective if applied during the OFF-state. Additional analysis of the RTS noise due to individual traps in small-area devices, clarify that the application of forward substrate bias to switched MOSFETs causes a large reduction of the mean emission time and increases the mean capture time, leading to a suppression of the low-frequency noise associated to the trapping de-trapping processes.
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