Abstract
The resistivity of doped semiconductor Si: P in the intermidiate concentration range was measured in low temperature region down to 10 mK. In the lowest temperatures Mott's formula for the variable range hopping is shown to be not applicable and T -n-like temperature dependence of resistivity is confirmed. The Importance of the level correlation in the random system is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
